2024年11月18-21日，第十屆國(guó)際第三代半導(dǎo)體論壇（IFWS2024）&第二十一屆中國(guó)國(guó)際半導(dǎo)體照明論壇（SSLCHINA2024）、先進(jìn)半導(dǎo)體技術(shù)應(yīng)用創(chuàng)新展（CASTAS）將在蘇州國(guó)際博覽中心G館舉辦。

遠(yuǎn)山半導(dǎo)體將攜多款產(chǎn)品亮相此次展會(huì)。值此，誠(chéng)摯邀請(qǐng)第三代半導(dǎo)體產(chǎn)業(yè)同仁共聚論壇，蒞臨C03號(hào)展位參觀交流、洽談合作。  

公司簡(jiǎn)介

遠(yuǎn)山半導(dǎo)體是一家專注于第三代半導(dǎo)體氮化鎵材料及功率器件研發(fā)與生產(chǎn)的高新技術(shù)企業(yè)。公司擁有一支來自于中國(guó)、日本、美國(guó)的國(guó)際化核心技術(shù)團(tuán)隊(duì)，股東方之一的日本PowDec株式會(huì)社是一家行業(yè)內(nèi)知名的氮化鎵技術(shù)研發(fā)企業(yè)，在氮化鎵外延材料與芯片領(lǐng)域掌握全球領(lǐng)先的核心技術(shù)與生產(chǎn)工藝。

Hillsemi Technologies Inc is a high-tech company focusing on the R&D and production of the third generation semiconductor GaN materials and power devices. Our company has an international core technology team from China, Japan and the United States. One of our main shareholders, PowDec Co., Ltd., is a well-known GaN technology R&D enterprise in the industry. It has mastered the world's leading core technology and production process in the field of GaN epitaxial materials and chips. 

遠(yuǎn)山采用“外延材料+芯片制造”的發(fā)展模式，具備完整的核心技術(shù)閉環(huán)與量產(chǎn)能力。與行業(yè)內(nèi)大多數(shù)企業(yè)不同，遠(yuǎn)山公司主打面向新能源行業(yè)應(yīng)用的中高功率工業(yè)級(jí)氮化鎵功率器件，產(chǎn)品涵蓋800V、1200V、1700V、3300V等多種規(guī)格的藍(lán)寶石基氮化鎵外延材料與功率器件，產(chǎn)品具備高耐壓與高頻率“兩者兼得”的特點(diǎn)，多項(xiàng)性能指標(biāo)處于行業(yè)內(nèi)領(lǐng)先水平，主要應(yīng)用于車載充電器、雙向DC-DC、微型逆變器、便攜儲(chǔ)能、V2G、硬開關(guān)等領(lǐng)域。在市場(chǎng)與客戶方面，公司已與某國(guó)際一線車企簽訂長(zhǎng)期供貨協(xié)議，同時(shí)與國(guó)內(nèi)多個(gè)新能源領(lǐng)域客戶建立合作關(guān)系并實(shí)現(xiàn)批量出貨。

Hillsemi adopts the development mode of "epitaxial material + chip manufacturing", and has complete core technology closed-loop and mass production capacity. Different from most enterprises in the industry, Hillsemi focuses on medium and high voltage industrial GaN power devices for new energy industry applications. Our products cover sapphire based GaN epitaxial materials and power devices of 800V, 1200V, 1700V, 3300V and other specifications, with the characteristics of both "high voltage resistance and high frequency". The specifications of Hillsemi’s power devices are at the leading level in the industry, mainly used in vehicle chargers, two-way DC-DC, micro inverters, portable energy storage, V2G, hard switches and other fields. In terms of market and customers, the company has signed a long-term supply agreement with an international first-line car manufacture, and has established cooperation relations with many domestic customers in the new energy field.

 成立至今，遠(yuǎn)山已握有40余項(xiàng)國(guó)內(nèi)外專利所構(gòu)建的“護(hù)城河”及多款氮化鎵功率器件產(chǎn)品，展望未來，公司將以獨(dú)特的藍(lán)寶石基氮化鎵外延材料為基礎(chǔ)，結(jié)合獨(dú)有的PSJ高耐壓芯片工藝，持續(xù)推出多品類中高功率氮化鎵功率器件產(chǎn)品，努力助推氮化鎵技術(shù)從傳統(tǒng)的低功率消費(fèi)級(jí)應(yīng)用拓展到中高功率新能源行業(yè)應(yīng)用，實(shí)現(xiàn)氮化鎵產(chǎn)品在工業(yè)級(jí)全域市場(chǎng)的廣泛應(yīng)用。

Since establishment, Hillsemi has held more than 40 domestic and foreign patents to build a "moat" and a variety of gallium nitride power device products. Looking forward to the future, our company will continue to launch a variety of medium and high power GaN power device products based on the unique sapphire based GaN epitaxial materials, combined with the unique PSJ high voltage withstand chip process, and strive to promote the expansion of GaN technology from traditional low voltage consumer applications to high voltage new industrial applications, so as to achieve the wide application of GaN products in the industrial level global market.

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